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• Multi-Threshold FinFET Design via Fin Shape Control

  Lead Inventor: Soha HassounTufts University Case T001998Overview: Design technique for creating multi-threshold FinFET transistors via fin shape control.Technology: A process for modifying the doping and geometric cross section of three-dimensional transistor fins in order to allow both low-power and high-power transistors on a single integrated circuit.Opportunity:...

  Published: 1/15/2025

  Inventor(s): Soha Hassoun, Brad Gaynor

  Keywords(s):  

  Category(s): Materials, Semiconductor

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